Wolfgang H. Krautschneider studied electronics engineering at Berlin University of Technology, Germany. After completion of his MS and Ph.D. degrees, he managed an industrial and academic joint project for automotive electronics. Then, he held an assignment as visiting scientist at the Central Research Laboratories of IBM in Yorktown Heights, USA. After this, he worked in the field of Megabit memory chips, first at the Siemens Corporate Research Center in Munich, Germany, and then in a joint DRAM development project of IBM and Siemens AG at the IBM site in Essex Junction, VT, USA. Next station of his professional life was the design of devices and circuits for Gigabit memories at the Corporate Research Laboratories of Siemens AG in Munich, Germany. In 1997, he received the Siemens Innovation Award for his invention of a new type of memory cell. In the same year, he completed his habilitation about "Solid-State Electronics" at the Berlin University of Technology.
In 1999 he was appointed a full professor at Hamburg University of Technology, where he heads the institute of nanoelectronics.
From 2002 to 2004, he served as Deputy Dean of the Faculty for Electrical Engineering of Hamburg University of Technology, and since 2004 as Dean of this faculty.
He has authored and coauthored more than 75 scientific papers and is the inventor and coinventor of more than 35 issued patents in the field of electronic circuits, memory cells, advanced semiconductor devices and reliability problems of MOS devices. |
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